Compound Semiconductor Surface Passivation and Novel Device Processing: Volume 573
| Author | : H. Hasegawa |
| Publisher | : |
| Total Pages | : 328 |
| Release | : 1999-07-13 |
| ISBN-13 | : UOM:39015041888861 |
| ISBN-10 | : |
| Rating | : 4/5 ( Downloads) |
Download or read book Compound Semiconductor Surface Passivation and Novel Device Processing: Volume 573 written by H. Hasegawa and published by . This book was released on 1999-07-13 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductors, such as GaAs and InP, typically have relatively high surface recombination velocities compared to silicon, and are subject to disruption of the surface during device processing. These two themes formed the basis for the April 1999 symposium. The 34 papers are divided into five broad topics areas: fundamentals of surfaces and their passivation, novel approaches for surface passivation and device processing, the structural, transport and optical properties of oxides, compound semiconductor surface passivation and novel device processing, and electronic devices and processing. Annotation copyrighted by Book News, Inc., Portland, OR
