Copper Area Selective Atomic Layer Deposition for Plasmonic Metallic Nanostructures

Download or read book Copper Area Selective Atomic Layer Deposition for Plasmonic Metallic Nanostructures written by Chengwu Zhang and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasmonics, a flourishing emergent science and technology, is about the interactions between electromagnetic radiation and electrons at metallic nanoparticles. It opens a new pathway for controlling chemical reactions on metallic nanostructures. Plasmonic dimers, especially with sub-10 nm nanogaps, can greatly enhance local electric field intensity through excitations of surface plasmons, which are collective oscillations of electrons excited by light. Previous studies to fabricate plasmonic dimers with sub-10 nm nanogaps include techniques such as electromigration, electroless gold plating, self-assembly, and high resolution electron beam lithography. However, these methods are limited either in pattern design or low yield for scaling up. To attain more flexibility and reliability in fabrication, there is a need for scalable methods to fabricate plasmonic dimers with sub-10 nm nanogaps, which is crucial for their use in practical applications. Atomic layer deposition (ALD) is a thin-film deposition technique capable of producing conformal thin films with precise control of thickness and composition at the atomic level. Area-selective ALD (AS-ALD) is a bottom-up process for direct deposition of materials only on desired regions of a substrate. In this study, we have explored incident light excitations and plasmonic resonances matching to achieve localized surface plasmon resonances (LSPRs) in the area-selective atomic layer deposition (AS-ALD) process. We have applied copper AS-ALD to tune gap sizes of layered and mixed plasmonic dimer arrays and electrically connected dipole-line arrays to sub-10 nm. Results demonstrate that AS-ALD is a reliable and flexible method to achieve sub-10 nm gaps on large area arrays.